IXTA300N04T2-7
30
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
40
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
28
26
R G = 2 ?
V GS = 10V
V DS = 20V
35
T J = 125oC
R G = 2 ?
V GS = 10V
V DS = 20V
30
24
22
I
D
= 200A
25
20
20
18
16
14
I
D
= 100A
15
10
T J = 25oC
25
35
45
55
65
75
85
95
105
115
125
40
60
80
100
120
140
160
180
200
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
120
75
45
55
100
80
60
40
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 20V
I D = 200A, 100A
65
55
45
35
40
35
30
25
20
t f t d(off) - - - -
R G = 2 ? , V GS = 10V
V DS = 20V
I D = 100A
I D = 200A
50
45
40
35
30
15
25
20
0
25
15
10
5
20
15
2
4
6
8
10
12
14
16
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
60
250
220
36
32
28
24
20
t f t d(off) - - - -
R G = 2 ? , V GS = 10V
V DS = 20V
T J = 125oC
55
50
45
40
35
225
200
175
150
125
100
t f t d(off) - - - -
T J = 125oC, V GS = 10V
V DS = 20V
I D = 100A, 200A
200
180
160
140
120
100
75
80
16
12
8
T J = 25oC
30
25
20
50
25
0
60
40
20
40
60
80
100
120
140
160
180
200
2
4
6
8
10
12
14
16
I D - Amperes
? 2008 IXYS CORPORATION, All rights reserved
R G - Ohms
相关PDF资料
IXTA32N20T MOSFET N-CH 200V 32A TO-263
IXTA36N30P MOSFET N-CH 300V 36A TO-263
IXTA3N100D2 MOSFET N-CH 1000V 3A D2PAK
IXTA3N120 MOSFET N-CH 1.2KV 3A TO-263
IXTA3N50D2 MOSFET N-CH 500V 3A D2PAK
IXTA3N60P MOSFET N-CH 600V 3A D2-PAK
IXTA48N20T MOSFET N-CH 200V 48A TO-263
IXTA50N25T MOSFET N-CH 250V 50A TO-263
相关代理商/技术参数
IXTA32N20T 功能描述:MOSFET 32 Amps 200V 78 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA32P05T 功能描述:MOSFET 32 Amps 50V 0.036 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA32P20T 功能描述:MOSFET TenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA36N20T 功能描述:MOSFET 36 Amps 200V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA36N30P 功能描述:MOSFET MOSFET N-CH 300V 36A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA36N30T 功能描述:MOSFET 36 Amps 300V 110 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA36P15P 功能描述:MOSFET -36.0 Amps -150V 0.110 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA38N15T 功能描述:MOSFET 38 Amps 150V 52 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube